Research on amorphous silicon-based thin film photovoltaic devices: Task B, Research on stable high efficiency large area, amorphous silicon-based submodules. Semi-annual subcontract report, 16 March 1989-30 November 1989.

摘要

The primary objective of this subcontract is to develop amorphous silicon p-i-n/p-i-n tandem junction photovoltaic submodules (>900 cm(sup 2)) having an aperture area efficiency of at least 9%. A further objective is to demonstrate 8% tandem submodules that degrade by no more than 5% under standard light soaking conditions. The main lines of investigation during this period concerned with exploration of novel types of p-layers, the properties and applications of doped zinc oxide films to a(minus)Si:H cells, the effects of various surface treatments of SnO(sub 2) and ZnO transparent conducting oxides (TCO's) on cell performance, the dependence of cell stability on substrate and junction type, and the development of techniques to enable the full potential performance of the a(minus)Si:H to be realized in a module configuration. 12 refs., 11 figs., 13 tabs.