Oriented lead zirconate titanate thin films: Characterization of film crystallization

摘要

Film processing temperature and time was varied to characterize the pyrochlore-to-perovskite crystallization of solution-derived PZT 20/80 thin films. 3000 (Angstrom) thick films were prepared by spin deposition using single crystal MgO as substrate. By controlled rapid thermal processing, films at different stages in the perovskite crystallization process were prepared with the tetragonal PZT 20/80 phase being / oriented relative to the MgO surface. An activation energy for the conversion process of 326 kJ/mole was determined by use of an Arrhenius expression using rate constants found by application of the method of Avrami. Activation energy for formation of the PZT 20/80 perovskite phase of the solution-derived films compared favorably with that calculated from data by Kwok and Desu for sputter-deposited 3500 (Angstrom) thick PZT 55/45 films. Similarity in activation energies indicates that the energetics of the conversion process are not strongly dependent on the method used for film deposition.