Plasma Immersion Ion Implantation Process for Semiconductor Fabrication. LinearReentrant Crossed-Field Amplifiers for in situ Measurements, Comparisons with Numerical Simulations and Study of Noise Mechanisms

摘要

We have performed in situ measurements in two low frequency CFAs to study severalbasic physics issues which may lead to CFA noise reduction. Our measurements include the local radio-frequency (RF) fields, electron density profiles, electron energy distributions and noise spectrums in both the linear CFA and the reentrant CFA. Comprehensive electron density measurements of the interaction region as well as parametric comparisons such as gain versus sole voltage, beam current and frequency have been used to benchmark two computer simulation codes, MASK and NESSP.