Research on Laser-Damage Threshold of Photoelectric Detectors

摘要

Permanent laser-damage effects in silicon PIN photoelectric diodes and siliconavalanche photodiodes irradiated with a l.06 micrometer or an 0.53 micrometer laser are studied. The laser-damage thresholds of the detectors are experimentally measured. The mean reason for causing permanent damage includes latent heat scorching at the PN junction of the photoelectric diodes. The damage thresholds are dependent on wavelength, pulse duration, and photodiode structure.