Luminescence Properties of Rare Earth Doped Semiconductors

摘要

This is the final report for an AASERT grant funding John Torvik, Ph.D. Thereport consists of the Ph.D. dissertation that came from this research. The work addresses the behavior of the rare earth erbium (Er) doped into GaN, with co-dopants oxygen and fluorine. The Er luminescence properties were studied versus temperature (10K, 77K, and up to room temperature), annealing treatment (number of anneals, duration, and temperature), co-dopant concentration (over three orders of magnitude), and the Er density. Co-dopants were essential to the