IR Luminescence (1.6-1.9 mu m) of Compressive-Strained InGaAs/InP quantum Wells Grown by MOVPE.

摘要

We report metal-organic chemical-vapor deposition-grown In(x)Ga(1-x) As/In(0.53)Ga(0.47)As/InP double heterostructures emitting at 1.65-1.85 micrometers at room temperature. The active region consists of a 25-100 A thick compressively strained In(x)Ga(1-x)As quantum wells with composition x in interval 0.69-0.81. Companson with our theoretical results shows that the shape of our quartum wells grown by metal-organic vapour phase epitaxy is not rectangular.