Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) Held in Shonan Village Center, Hayama-machi, Kanagawa, Japan on August 30-September 2, 1998

摘要

The 3rd Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA 98), held in Hayama-machi, Japan. A special emphasis was placed on the applications in information systems for this workshop. The Workshop sessions contain a variety of contributions on devices, materials, circuits and systems. The technologies employed are based on heterostructure bipolar transistors, heterostructure field effect transistors and resonant tunneling diodes, and make use of a variety of heterostructure material systems including III-Vs (e.g. GaAs, InP and related compounds), group IV semiconductors (e.g. SiGe), and wide bandgap semiconductors (e.g. 111-V nitrides and SiC). Special emphasis was also placed on the effective insertion of these devices and circuits into systems such as mobile, fiber optic, space communications, as well as signal and data processing.