Contribution of Antimonide Surface Reconstructions to Heterostructure Interface Roughness

摘要

Using RHEED and STM, we have studied surface reconstructions and formation of islands and interfaces for the 6.1 Angstrom family of compound semiconductors (InAs, GaSb, AlSb). The structure and stoichiometry of MBE-grown antimonide surfaces lead to growth and roughening mechanisms that are distinctly different from other III-V materials. When a new material is grown on an antimonide surface, some blurring of the resulting heterointerface must occur in the form of monolayer islands or atomic-scale intermixing.