Conference on the Physics and Chemistry of Semiconductor Interfaces (26th) Held in the Catamaran Resort Hotel in Pacific Beach, San Diego, California on 17 January 1999 to 21 January 1999. Microelectronics and Nanometer Structures: Processing, Measurement, and Phenomena

摘要

The Proceedings of the 26th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-26) are contained in this volume. The Conference was held at the Catamaran Resort Hotel in Pacific Beach, San Diego, California from Sunday evening, 17 January 1999 to noon on Thursday 21 January 1999 A total of 18 invited and 69 contributed papers were presented, with 113 attendees. This year's Conference saw a large number of papers relating to nitride semiconductor interfaces and piezoelectric effects (41) reflecting the increasing interest in that field worldwide. Besides the traditional emphasis on growth and characterization of other compound semiconductor interfaces (35) a significant number of papers addressed the chemistry and physics of SiO2/Si interfaces (23). There were also a small but significant number of papers dealing with magnetic materials, and spin transport (6), an area that the PCSI Committee believes will increase in the future. Carol Ashby presented some interesting new results on the role of As in oxidation of AlGaAs layers. Steve Streiffer gave an overview of recent work on Perovskite structure ferroelectric films for possible gate dielectrics in transistors. Other exciting advances reported at the Conference include: silicon substrate-based optoelectronic structures predicted by John Joannopoulos from MIT, MBE studies of GaN growth, impurity and surfactant effects in GaN total energy calculations, and real-time x-ray scattering studies of MOCVD growth of GaN films. The Tuesday 'Rump' session's theme this year was piezoelectric effects at semiconductor interfaces and included stimulating talks by D. L. Smith and a number of others.