首页> 美国政府科技报告 >Herstellung and Untersuchung con (Ba,Sr)TiO3-Duennschichten fuer zukuenftige hochintegrierte Halbleiterspeichr (Manufacture and Testing of (Ba, Sr)TiO3 Thin Layers for Future Highly Integrated Semiconductor Storage)
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Herstellung and Untersuchung con (Ba,Sr)TiO3-Duennschichten fuer zukuenftige hochintegrierte Halbleiterspeichr (Manufacture and Testing of (Ba, Sr)TiO3 Thin Layers for Future Highly Integrated Semiconductor Storage)

机译:Herstellung和Untersuchung con(Ba,sr)TiO3-Duennschichten fuer zukuenftige hochintegrierte Halbleiterspeichr(制造和测试(Ba,sr)TiO3薄层,用于未来高度集成的半导体存储)

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This study is concerned with the morphological and electrical qualities of thin mixed crystal systems in (Ba,Sr) TiO3 layers that were shed out of the gas phase through metal-organic chemical vapor deposition. Influence parameters, such as field and temperature, layer thickness, stoichiometry, and electrode materials, as well as manufacturing conditions, are discussed. An essential difficulty that arose from this investigation involved the employment of mixed crystal systems as a non-transient relaxation streams in a short time frame and discusses present physical mechanisms. High frequency experiments rounded out the tests on non-conductor relaxation.

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