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Planar Homojunction Gallium Nitride (GaN) P-i-N Device Evaluated for Betavoltaic Energy Conversion: Measurement and Analysis.

机译：平面同质结氮化镓（GaN）p-i-N器件评估贝塔伏特能量转换：测量和分析。

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作者
Litz, M.; Ray, W.; Russo, J.; Kelley, S.; Smith, J.;
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年度 2016
页码 1-30
总页数 30
原文格式 PDF
正文语种 eng
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2. Synthesis and structure of Sr3GaN3 and Sr6GaN5: Strontium gallium nitrides with isolated planar [GaN3](6-) anions [J] . Park DG., Gal ZA., DiSalvo FJ. Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics . 2003,第5期

机译：Sr3GaN3和Sr6GaN5的合成与结构：具有孤立的平面[GaN3]（6-）阴离子的锶锶镓氮化物
3. Ammonolytical conversion of microcrystalline gallium antimonide GaSb to nanocrystalline gallium nitride GaN: thermodynamics vs. topochemistry [J] . Drygas Mariusz, Jelen Piotr, Bucko Miroslaw M., RSC Advances . 2015,第100期

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Planar Homojunction Gallium Nitride (GaN) P-i-N Device Evaluated for Betavoltaic Energy Conversion: Measurement and Analysis.

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