Robust Visible and Infrared Light Emitting Devices Using Rare-Earth- Doped GaN

摘要

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths. GaN:RE devices are extremely versatile emitters which emit light at very specific wavelengths and with very narrow spectral linewidth (due to inner shell transitions of the selected RE dopants). We have fabricated singly doped GaN: RE devices emitting pure light at the three primary visible colors (red, green and blue) and at important IR wavelengths (1.0, 1.3 and 1.5 m). We have also shown that co- doping with multiple REs produces mixed colors adjustable throughout the color spectrum. These multi-color light emitters have the potential to revolutionize many Army applications, such as vehicle and personal displays, secure communications, short-range illuminators, etc. The GaN:RE light emitters are very robust in terms of exposure to high and low temperatures, corrosives, radiation, shock, vibration, etc.