Temperature Dependence of Optical Linewidth in Single InAs Quantum Dots.

摘要

We consider the temperature dependence of the exciton linewidth in single InAs self-assembled quantum dots. We show that in cases where etched mesas are used to isolate the dots, the magnitude of the linear temperature coefficient and its dependence on mesa size are described well by exciton scattering by acoustic phonons whose lifetimes are given by phonon scattering from the mesa interfaces. This work shows that phonon scattering at interfaces and surfaces typically present in quantum dot structures can be important in dynamical processes in quantum dot systems.