Coupling Graphene Sheets with Magnetic Nanoparticles for Energy Storage and Microelectronics.

摘要

Low voltage self-assembled monolayer field-effect transistors (SAMFETs) that operate under an applied bias of less than -3 V and a high hole-mobility of 10-2 cm2 V-1 s-1 are reported. A self-assembled monolayer (SAM) with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high- voltage (AlOx/300 nm SiO2) and low-voltage (HfO2) dielectric platforms. High performance is achieved through the enhanced SAM packing density via a heated assembly process and through the improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methyl-thio head group combined with thermal annealing post gold source/drain electrode deposition to facilitate the interaction between SAM and electrode. Furthermore, this SAMFET platform will be utilized as a monolayer memory transistor that has a charge trapping layer comprised of an interlayered magnetic nanoparticles and graphene oxide.