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Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors.

机译：氮化镓高电子迁移率晶体管的质子辐射效应分析。

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作者
Augustine, R. T.;
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年度 2017
页码 1-87
总页数 87
原文格式 PDF
正文语种 eng
中图分类
关键词
Proton Radiation Effects; Electron Mobility Transistors; aluminum gallium nitride;

机译：质子辐射效应;电子迁移率晶体管;氮化铝镓;

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1. Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier [J] . Raut Samriddhi, Sehra Khushwant, Mishra Meena, Semiconductor science and technology . 2021,第4期

机译：质子辐照对碳化硅高电子迁移率晶体管基射频功率功率放大器的无缓冲氮化镓
2. Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors [J] . Longobardi Giorgia, Udrea Florin, Sque Stephen, Power Electronics, IET . 2015,第12期

机译：通过测量和技术-计算机辅助设计仿真研究金属-绝缘体-半导体场效应晶体管和高电子迁移率晶体管的氮化镓/氮化镓铝/氮化镓高压晶体管中的表面电荷和陷阱
3. Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility [J] . Ken Everaerts, Li Zeng, Jonathan W. Hennek ACS applied materials & interfaces . 2013,第22期

机译：印刷铟镓氧化锌晶体管。自组装纳米介电体对低温燃烧生长和载流子迁移的影响
4. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes [C] . K. Allums, B. Luo, R. Mehandru, Symposium on GaN and Related Alloys―2001, Nov 26-30, 2001, Boston, Massachusetts, U.S.A. . 2001

机译：质子辐照对氧化dium /氮化镓MOS二极管的影响
5. Qualitative and quantative characterization of trapping effects in aluminium gallium nitride/gallium nitride high electron mobility transistors. [D] . Kim, Hyeong Nam. 2009

机译：氮化铝镓/氮化镓高电子迁移率晶体管中俘获效应的定性和定量表征。
6. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [O] . Y. C. Lin, S. H. Chen, P. H. Lee, 2020

机译：具有厚铜金属化特性的氮化镓（GaN）高电子迁移率晶体管用于Ka波段应用的功率密度为8.2 W / mm
7. Proton irradiation-induced metal voids in gallium nitride high electron mobility transistors [O] . Wade Michael G. 2015

机译：氮化镓高电子迁移率晶体管中质子辐照引起的金属空洞
8. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors. [R] . Wade, M. G. 2015

机译：氮化镓高电子迁移率晶体管中质子辐照诱导的金属空洞。

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors.

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