Investigation into Self-Organizational Tendencies of Cobalt- and Titanium-Silicide Nanostructures on Si Surfaces

摘要

This report results from a contract tasking Tel Aviv University as follows: To achieve this goal, the work will be divided into two principle parts: (a) self-organization of stepped substrates, and (b) ordered nanocrystal growth. In the first part, the experiments will be aimed at achieving full control over the substrate step characteristics, e.g. terrace width and step- bunch height, by varying the degree of wafer miscut and high temperature flash parameters (temperature, duration, and direction of the heating current relative to step orientation). The result of this stage will be variously spaced periodic step-structures. In the second part, Co and/or Ti will be deposited onto such 'templates', reacted with Si to form silicide dots, and their tendency for 2D ordering will be studied as a function of substrate periodicity and silicide nucleation and growth parameters.