2D Crystal Semiconductors New Materials for GHz-THz Devices.

摘要

This award allowed us to do the following for the first time 1) Propose alternative devices for GHz-THz electronics based on 2D Xtals, such as the tunneling THIN-TFET. 2) Tunneling transistors using 2D Xtal semiconductors are most promising for GHz-THz electronics. 3) Identify the major scattering mechanisms limiting mobility in 2D crystals towards high-frequency operation. 4) Identify methods to improve carrier transport in 2D Crystal semiconductors. 5) Compare FETs made from naturally occurring and chemically synthesized 2D Crystal semiconductors. 6) Elucidate the effect of contact resistance, and gauge the challenges for GHz-THz electronics by comparing to Si and high-speed III-V semiconductor materials.