Growth Control of Carbon Nanowalls

摘要

Growth mechanisms of carbon nanowalls for electronic device applications were explored. Properties investigated include morphology control, position-controlled growth, and control of their electrical property. During the course of this work, carbon nanowalls were successfully grown by the simultaneous irradiation of fluorocarbon radicals, hydrogen atoms, and Ar ions and it was confirmed that the ion bombardment is crucial for the nucleation of carbon nanowalls. Additionally, carbon nanowalls were grown area-selectively on the substrate through using patterned catalyst or with the help of deep trenches. The nucleation rate of carbon nanowalls depended on the class and forms of substrate materials. The growth of carbon nanowalls was enhanced on the Ti thin layer. Similar enhancement was observed on the thin layer or nanoparticles of Co, Pt and Fe.