STUDIES OF SECOND BREAKDOWN IN JUNCTION DEVICES

摘要

This Final Report is divided into three sections. The first section is concerned with a study of second breakdown characteristics of transistors and how they are affected by the internal current distribution. The results of this study, which included the use of temperature-sensitive phosphors to reveal-current distributions, have emphasized how intimately the susceptibility of the transistor to second breakdown is linked to the distribution of current or energy dissipation within the transistor. A better understanding of the role of the base drive in second breakdown was achieved and led to a test which was used to distinguish second breakdown from other Low voltage modes that have been recently reported to be different levels of second breakdown.