Significantly Improved Minority Carrier Lifetime Observed in a Long- Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb.

摘要

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of greater than 412 ns at 77K under low excitation for a long- wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga1-xInxSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.