The Analysis of the Cryotronic Associative Element Controlled by Monopolar Currents

摘要

An analysis presented is given of the associative memory element designed by I. D. Voytovich (Assotsiativnyy zapominayushchiy element. The analysis of the element includes consideration of: the gate threshhold current; the network critical current; the amplification coefficient; the coefficient of rectangularity of the transfer curve, and the relative deviation from the mean values of inductivity of the branches of the memory edge.