Nonlinear Semiconductor Resistors Based on Tin Oxide for Electroluminescent Matrix Screens

摘要

The oxide systems ZnO-SnU2, CoO-SnO2, and NiO-SnO2 were studied as nonlinear, semiconducting resistors which can be used to increase the contrast for electroluminescent matrix screens. From a study of the conductivity and v. amp. characteristics of these systems it was concluded that the compound 20 percent ZnO-80 percent SnOsub2 has the best nonlinear properties with a coefficient of non linearity of approximately 10, a specific resistance of 10 super 9 ohm. cm and dielectric permeability on the order of 40 at a frequency of 5 kHz. (Author)