Inverted Heterojunction Photodiode.

摘要

The patent application describes an inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 micrometer portion of the infrared spectrum and operable above 77K. The diode structure comprises a PbTe substrate, a first buffer layer of Pb(.90)Sn(.10)Te material on said substrate and a second active layer of a Pb(.80)Sn(.20)Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.