A novel voltage tuneable spectrometer-detector has been demonstrated whose principles are associated with the electric subbands existent at the interface between silicon and silicon dioxide. The photo resistive response of n-channel MOSFFT structures to radiation resonant with energy levels in the inversion layer has been characterized and compared with existent theory. Operating at 4.2°K, typical devices have continuous tuneability from 8 mev(-150μ) to 30 mev (-40μ), a band width of approximately 1 mev, a response time of 2,5x10 seconds, and a noise equivalent power (NEP) of approximately 2.5x10-10 watts/ (Hz) limited by the available amplifiers.
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