首页> 美国政府科技报告 >Accumulation of Time-Dependent Strain during Dwell-Fatigue Experiments of iBN-Sylramic Melt Infiltrated SiC/SiC Composites with and without Holes (Preprint)
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Accumulation of Time-Dependent Strain during Dwell-Fatigue Experiments of iBN-Sylramic Melt Infiltrated SiC/SiC Composites with and without Holes (Preprint)

机译:具有和不具有孔的iBN-纳米陶瓷熔体渗透siC / siC复合材料的驻留疲劳实验中的时间依赖应变的累积(预印本)

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Accumulation of time-dependent strain during dwell-fatigue experiments of iBN-Sylramic Melt Infiltrated SiC/SiC composites is investigated. A 2-hour load cycle is repeated for specimens without holes and specimens with a central hole under the following conditions: (i) a stress ratio of 0.05, (ii) various stress levels, (iii) 815 deg C and 1204 deg C, (iv) different times up to 600 hours, and (v) different hole diameters. An increase in the accumulation of time-dependent strain with the increase in time and stress level is observed for specimens with and without holes with the time- dependent strain at 1204 deg C, much higher than that observed at 815 deg C. All specimens recovered part of their time-dependent strain at the minimum stress level and the value of both time-dependent strain and recovery strain depreciated with time.

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