Manufacturing Methods and Technology Program for the Establishment of Production Techniques and the Pilot Production of a High Efficiency,High Power GaAs Read-Type IMPATT Diode.

摘要

The purpose of this program is the establishment and verification of techniques to reduce the labor and increase control of processes used in the preparation of epitaxial GaAs and subsequent fabrication of Read-type, Low-High-Low (LHL) GaAs IMPATT diodes. The reduced labor and increased control will be demonstrated by improved manufacturing yields at reduced manufacturing cost. The mechanism by which these improvements are to be obtained is the automation of the epitaxial crystal growth process with appropriate feedback mechanisms which will regulate process variables in accordance with actual conditions. The system is required to control and respond rapidly to variation in wafer temperature, exposure time of the wafer to this temperature, the flow rate of the dopant and epitaxial gases, the chemical composition of these gases and the interrelationship of all these factors. In addition, the epitaxial crystal evaluation (routine) will be eliminated and crystal evaluation (non-routine) will be reduced. The engineering effort will be restricted to the epitaxial crystal growth and epitaxial crystal evaluation required to produce high-efficiency, Read-type IMPATT diodes plus sample diodes to demonstrate the progress.