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Application of a Heat Pipe to Czochralski Growth. Part I. Growth and Segregation Behavior of Ga-Doped Ge.

机译：热管在Czochralski生长中的应用。第一部分Ga掺杂Ge的生长和偏析行为。

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作者
Martin, E. P.; Witt, A. F.; Carruthers, J. R.;
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年度 1978
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Crystal growth; Czochralski crystals; Germanium; Heat pipes; Gallium; Doping; Hot regions; Boundary layer; Reprints;

机译：晶体生长; Czochralski晶体;锗;热管;镓;掺杂;热区;边界层;重印;

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Application of a Heat Pipe to Czochralski Growth. Part I. Growth and Segregation Behavior of Ga-Doped Ge.

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