Direct-Write Metallization of Silicon MOSFET's Using Laser Photodeposition.

摘要

Abstract-Gate electrodes of enhancement-mode silicon MOSFET's have been written directly using a new, mask-free laser photodeposition technique. Transistor transconductances and threshold voltages were systematically tuned by varying the gate geometry with the laser beam. The new metallization process is potentially useful for tuning and optimizing the characteristics of individual devices in integrated circuits.