Fundamental Investigation of Infrared Properties of Graphene for Potential Sensor Applications.

摘要

This document is a final report for a project on graphene performed at Carnegie Mellon from September 1, 2009-August 31, 2012. The project goals were twofold: (i) construct a growth system for synthesizing high quality, and (ii) investigate the properties of the material for potential infrared sensing. The first goal has been successfully met; the second has yielded results that have been informative on future directions on the fabrication of graphene-based infrared sensors. We have determined, for example, that it is possible to dope graphene p-type and n-type with metals of appropriate work functions relative to graphene. Doping is essential for the formation of p-n junctions that can be used in light detection. Furthermore, the results of the project suggest that it may be advantageous to embed graphene in an optical cavity to enhance its absorbance so that sufficient photocurrent can be generated when the material is illuminated. This requirement is in view of the single atomic- or bi-layer nature of graphene samples that are likely to be used in active media of detector structures.