Fabrication and Properties of Multilayer Structures

摘要

Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vapor and molecular beam epitaxy has been carried out. Surface point defect energies, ledge energies and face energies, as well as the surface stress tensor, have been calculated. The strongly compressive surface stress tensor has been found to dominate all surface reconstruction processes. Experimental studies of SiC film formation via dual source and single source sputtering processes is described in an attempt to produce almost single crystal SiC films.