Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT.

摘要

The group-III nitride materials system has been meticulously investigated since the late 1980s for its applications in electronic and optoelectronic devices. These materials have a direct bandgaps that are tunable from 0.7 eV (InN) to 6.2 eV (AlN) by forming alloys of the different III- nitride binaries. This bandgap range covers the entire visible spectrum, and some useful regions of ultraviolet and infrared light. In the case of light emission, this materials system boasts an enormous array of applications including indicators, lasers, solid state illumination, and water purification/sterilization among others. Group-III nitrides also have a very strong resistance to radiation damage, providing applications in space, as well.