Deep Level Derivative Spectroscopy of Semiconductors by Wavelength Modulation Techniques

摘要

An infrared wavelength modulated absorption spectrometer capable of measuring changes in the absorption coefficient of levels of .00001/cm in the spectral range 0.2 + .20 microns was employed to study bulk and surface absorption in semiconductors. The results of the study of deep levels in semi-insulating GaAs, surface layes on Si, GaAs, and HgCdTe, oxygen complexes in floating zone silicon, and determination of strain in ion implanted layers are presented. Keywords: Wavelength modulation spectroscopy; Deep levels; Mercury cadium telluride; Oxygen floating zone; Silicon; Gallium arsenide; Reprints.