Preparation and Characterization of Alumina Films by Sol-Gel Method

摘要

The method of producing a good dielectric layer such as A12O3 on a III-V semiconductor such as InP is limited by the thermal stability of the substrate. Since InPis reported to be stable only up to about 360 C (1), low temperature synthetic methods must be employed to produce insulating films. A low temperature sol-gel method was used to apply a thin film of alumina on indium phosphide substrates by spin application. The resultant films were characterized by ellipsometry and electron microscopy to determine thickness and porosity. The current-voltage characteristics of the films were measured as a function of annealing temperature.