Deposition of Device Quality Epitaxial Layers of Gallium Nitride and Indium Nitride for Electronic Applications

摘要

The major activity scheduled for the first year of the program was the design and construction of a suitable ultra-high vacuum deposition apparatus and the initiation of shakedown experiments. The apparatus has essentially been completed and shakedown experiments are beginning. The apparatus design and the experimental plan for the shakedown experiments are described in this report.