Research on Mercury Cadmium Telluride.

摘要

This report summarizes work done over a five-year period on a program entitled, Research on Mercury Cadmium Telluride. Using the alloy growth OMVPE process, we have obtained compositional uniformity of 0.005 over a 2 GaAs slice. p-type doping to 10 17/cm3 and n-type doping to 4 x 10 18/cm3 have been achieved using As and In respectively. Annealing studies have shown that the background concentration of undoped HgCdTe is around 5 x 10 14/cm3. Passivation techniques, using anodic sulfidization, have been developed for HgCdTe. Both p-n diodes and field effect transistors have been demonstrated on material grown during the course of this program. A diffusion length of 120 microns has been measured in material with x = 0.3. (jes)