Adhesion Enhancement of Thin Copper Film on Polyimide Modified by Oxygen ReactiveIon Beam Etching

摘要

Polyimide (PI) films were modified by O2 reactive ion beam etching (RIBE) toenhance the adhesion of subsequently deposited copper films. The adhesion of evaporated copper on the O2 RIBE-modified PI consisted of three different regimes. The first regime involved chemical reaction between PI and Cu atoms; the second regime involved the mechanical interlocking of the grass-like structure of the modified PI with Cu; and in the third regime, overetching was observed. The locus of failure was also analyzed to understand the adhesion mechanism of Cu on the PI. A 10% decrease in adhesion strength was observed after thermal cycling. Furthermore, humidity tests showed that the adhesion enhancement by mechanical interlocking of the grass-like structure is not affected by the presence of moisture.