Sequential Resonant Tunneling in Superlattices: Light Scattering by IntersubbandTransitions

摘要

We report on a study of sequential resonant tunneling in a GaAs-(Al,Ga)Assuperlattice using Raman scattering by Intersubband excitations. The data suggest that there is a deficiency of holes at the domain boundaries and that resonant tunneling involves alignment of charge-density excitations. Results also indicate that the transport behavior is determined primarily by the carrier concentration as opposed to the transit time.