Time Resolved Studies of In-Well and Cross-Well Carrier Transport in MQW Semiconductor Structures.

摘要

The objective of this research project was to establish a better understanding of in-well and cross-well carrier transport in multiple quantum well (MQW) semiconductors. Carrier emission from both multiple and single quantum well devices have been studied in detail in p-i-n doped MQW SEED-type modulator structures and in waveguides. Simultaneous measurements of electron and hole emission rates has been accomplished for the first time leading to important conclusions concerning thermionic emission models for quantum wells. Extensive modeling of the dynamical optical response relating to cross-well carrier transport has been carried out. Spin relaxation has also been used successfully to monitor carrier dynamics in MQW devices. A new family of mode-locked lasers have been developed for time resolved measurements which are looking extremely attractive as ultrashort pulse sources for GaAs-based optoelectronic devices.