Quasi-Two-Dimensional Electron Gas Behavior in Doped LaAlO3 Thin Films on SrTiO3 Substrates.

摘要

We have demonstrated the growth of Tm and Lu doped LaAlO3 epitaxial thin films on single crystal (001) SrTiO3 substrates. These rare-earth dopants potentially act as sources of localized moment and spin-orbit scattering centers at the interface. Through structural and chemical characterization, we confirm the incorporation of Tm and Lu dopants into highly crystalline LaAlO3 films. The rare earth doping of the La site does not significantly modify the sheet carrier concentration or mobility compared to undoped samples despite the evolution of sheet carrier concentration, mobility, and sheet resistance with LaAlO3 thickness in undoped LaAlO3 films on SrTiO3.