Thermo-Optical Switching in Si Based Etalons

摘要

Thermo-optical switching in Si based etalons has been demonstrated in two devicestructures. In one experiment the switching time of a Si etalon has been reduced from ms to us by choosing a probe beam of shorter wavelength in an external switching configuration'. The switching time has further been improved to the ns range by the use of a 1.06m Nd:YAG laser pump which is presumed to give rise to a thermo-refractive change in the Si etalon and at the same time the switching