Calculated Room-Temperature Threshold Current Densities for the Visible II-VIZnCdSe/ZnSe Quantum-Well Diode Lasers. (Reannouncement with New Availability Information)

摘要

Room-temperature threshold current densities for the visible II-VI ZnCdSe/ZnSesemiconductor quantum-well diode lasers have been calculated using a simple model for the quantum-well gain and spontaneous radiative recombination rate. These results are compared with those for the infrared III-V GaAs/GaAlAs quantum-well lasers, calculated using the same model. By tailoring the epitaxial structure for optimum optical confinement, cw room-temperature operation of the ZnCdSe/ZnSe quantum-well lasers should be possible with threshold current densities as low as 400 A/sq cm for a 1-mm cavity length and uncoated laser facets, assuming the problem of ohmic contacts to the epitaxial structure is resolved.