Fully-Depleted Silicon-On-Sapphire and Its Application to Advanced VLSI Design.(Reannouncement with New Availability Information)

摘要

In addition to the widely recognized advantages of full dielectric isolation,e.g., reduced parasitic capacitance, transient radiation hardness and processing simplicity, fully-depleted silicon-on-sapphire offers reduced floating body effects and improved thermal characteristics when compared to other silicon-on-insulator technologies. The properties of this technology and its potential impact on advanced VLSI circuitry will be discussed.