Characterization of the Si/SiO2 Interface Morphology from Quantum Oscillations inFowler-Nordheim Tunneling Currents

摘要

As design rules shrink to conform with ULSI device dimensions, gate dielectricsfor MOSFET structures are required to be scaled to below-60A where some properties of the device, such as interface roughness, that are negligible for thicker films become critical. Microroughness at the interface of ultrathin MOS capacitors has been shown to degrade these devices.... Quantum oscillations.