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Study of Minority Carrier Lifetimes in Very Long Wave Infrared Strained Layer InAs/GaInSb Superlattices (Postprint).

机译：非常长波红外应变层Inas / GaInsb超晶格（postprint）中少数载流子寿命的研究。

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Haugan, H. J.; Olson, B. V.; Kadlec, E. A.; Kim, J. K.; Shaner, E. A.; Brown, G. J.;
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年度 2016
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
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1. Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices [J] . Haugan Heather J., Olson Benjamin V., Brown Gail J., Optical engineering . 2017,第9期

机译：基于应变层InAs / GaInSb超晶格的超长波红外吸收剂的载流子寿命显着提高
2. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice [J] . Klein Brianna, Gautam Nutan, Plis Elena, Journal of Vacuum Science & Technology . 2014,第2期

机译：中波红外II型InAs / GaSb应变层超晶格中的载流子寿命研究
3. Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection [J] . Haugan H. J., Brown G. J., Elhamri S., Applied Physics Letters . 2012,第17期

机译：生长温度对InAs / GaInSb应变层超晶格的影响，用于超长波长红外检测
4. Study of minority carrier lifetimes in very long-wave infrared strained-layer InAs/GaInSb superlattices [C] . H. J. Haugan, B. V. Olson, G. J. Brown, Infrared sensors, devices, and applications VI . 2016

机译：超长波红外应变层InAs / GaInSb超晶格中少数载流子寿命的研究
5. Design and demonstration of InAs/GaInSb strained-layer superlattices optimized for long-wavelength infrared detectors. [D] . Johnson, Jeffery Lee. 1997

机译：针对长波长红外探测器优化的InAs / GaInSb应变层超晶格的设计和演示。
6. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation [O] . Gamini Ariyawansa, Joshua Duran, Charles Reyner, 2019

机译：用于高温操作的InAs / InAsSb应变层超晶格中波红外探测器
7. Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection [O] . Haugan, H.J., Brown, G.J., Elhamri, S., 2012

机译：生长温度对InAs / GaInSb应变层超晶格对超长波长红外检测的影响

Study of Minority Carrier Lifetimes in Very Long Wave Infrared Strained Layer InAs/GaInSb Superlattices (Postprint).

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