Flat-Aluminum Based Voltage-Programmable Link for Field-Programmable Devices

摘要

A new metal insulator metal (MIM) structure has been developed for use in fieldprogrammable gate arrays (FPGA's) as a voltage programmable link (VPL). The present capacitor structure relies on aluminum metallization; hence, it should be amenable to immediate application. The addition of minute amounts of titanium or molybdenum has been found to suppress hillock formation. The insulator, prepared by means of plasma enhanced chemical vapor deposition (PECVD), comprises a sandwich of a nearly stoichiometric silicon dioxide interposed between two like layers of silicon rich silicon nitride. This MIM structure has displayed characteristics desirable for use in the emerging FPGA technology including high density, very low on-resistance, reduced capacitance, low programming voltage, and the potential for further scaling to the submicron regime.