Growth of Electric-Field Domains in Quantum-Well Structures: Correlation WithIntersubband Raman Scattering

摘要

We report on Raman scattering by intersubband excitations in GaAs-AlAssuperlattices which exhibit electric-field domains resulting from sequential resonant tunneling. In regions where two domains coexist, the scattering intensity varies linearly with the applied voltage. This behavior, consistent with the standard domain picture, can be explained by a model relying on the electric-field dependence of the cross section and the domain size. (jg).