Diode-Pumped Passively Q-Switched Picosecond Microchip Lasers

摘要

Passively Q-switched 1:064-microns microchip lasers have been constructed fromthin pieces of Nd3+:YAG bonded to thin pieces of Cr4+:YAG. When pumped with the unfocused 1.2-W output of a fiber-coupled diode, these devices produced 11-microJ pulses of 337-ps duration at a pulse repetition rate of 6 kHz in a single-frequency TEM00 mode. The peak power of the lasers was in excess of 28 kW, with unfocused peak output intensities exceeding 180 MW/sq cm. (jg).