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Sub Tenth Micron CMOS Devices - A Demonstration of the Virtual Factory Approachto New Structure Design

机译：第十代微米CmOs器件 - 虚拟工厂方法展示新结构设计

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The parent program 'Semiconductor Manufacturing For the 21st Century' has focusedon showing the power of a 'Virtual Factory' operating in parallel with a computer controlled 'Programmable Factory'. This project is exploring the use of advanced

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作者
Plummer, J. D.;
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年度 1995
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总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Complementary metal oxide semiconductors; Control; Simulation; Manufacturing; Computer programming; Structures; Gates(Circuits); Semiconductors; Etching; Metal oxide semiconductors; Drainage; Vertical orientation; Silicon; Mosfet semiconductors;

机译：互补金属氧化物半导体;控制;模拟;制造;计算机编程;结构;栅极（电路）;半导体;蚀刻;金属氧化物半导体;排水;垂直取向;硅; mosfet半导体;

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专利

1. A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices [J] . Wen-Chau Liu, Kong-Beng Thei IEEE Electron Device Letters . 2000,第7期

机译：一种新的和改进的无边界接触（BLC）结构，用于亚四分之一微米CMOS器件中的高性能钛硅化物
2. Design of 900 Mhz AC to DC Converter Using Native Cmos Device of TSMC 0.18 Micron Technology for RF Energy Harvest Application [J] . Angelo N. Rodriguez, Febus Reidj G. Cruz, Ronnie Z. Ramos Universal Journal of Electrical and Electronic Engineering . 2015,第3期

机译：使用台积电0.18微米技术的原生Cmos器件设计900 Mhz交流到直流转换器，用于射频能量收集应用
3. 2D-mapping of dopant distribution in deep sub micron CMOS devices by electron holography using adapted FIB-preparation. [J] . Lenk A, Lichte H, Muehle U Journal of Electron Microscopy . 2005,第4期

机译：深层亚微米CMOS器件中掺杂剂分布的2D映射通过电子全息图（使用自适应FIB制备）进行。
4. Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS [C] . Nakahara, Y., Takeuchi, . 1996

机译：十分之一微米以下CMOS的超浅原位掺杂凸起源极/漏极结构
5. Bipolar device characterization and design in CMOS technologies for the design of high-performance low-cost BiCMOS analog integrated circuits [D] . Larsen, Frode. 1994

机译：CMOS技术中的双极性器件表征和设计，用于设计高性能低成本BiCMOS模拟集成电路
6. Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices [O] . Yi Zhao 2012

机译：高k和更稳定的稀土氧化物作为先进CMOS器件的栅极电介质的设计
7. Robust Design With Increasing Device Variability In Sub-Micron Cmos And Beyond: A Bottom-Up Framework [O] . Zhang Xuan 2012

机译：亚微米Cmos及其后的器件可变性不断提高的稳健设计：自下而上的框架

Sub Tenth Micron CMOS Devices - A Demonstration of the Virtual Factory Approachto New Structure Design

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