Characterization of Defect Structures in Lely 6H-SiC Single Crystals usingSynchrotron White Beam X-Ray Topography

摘要

Defect structures in Lely SiC single crystals have been studied using synchrotronwhite beam X-ray topography. Basal plane dislocations and stacking faults probably generated during post-growth cooling are clearly revealed. For both perfect dislocations and partial dislocations bounding the stacking faults, Burgers vectors and line directions are determined from contrast extinction analysis as well as projected direction analysis on different topographic images. The fault planes and fault vectors of the stacking faults were determined using contrast extinction analysis. Possible dislocation generation mechanisms are briefly discussed.