High-Reflectivity Visible-Wavelength Semiconductor Native Oxide Bragg ReflectorsGrown by Metalorganic Chemical Vapor Deposition

摘要

The growth and fabrication of high-quality vertical distributed Bragg reflectors(DBRs) utilizing layers of InAlP and the AlAs native oxide are reported. The III-V epitaxial structures employed in this work consist of alternating layers of InAlP and AlAs grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). The DBR mirrors are formed by selective lateral oxidation of the AlAs layers (H2O vapor + N2, 450 deg C) resulting in a layered structure of single-crystal InAlP and amorphous Al(x)O(y). The oxidized vertical DBR mirrors having only 4.5 pairs exhibit high reflectivity in the 96%-99% range over a wide spectral region (delta lambda approx. 200 nm). The structural and optical properties of these DBR mirrors have been measured and show that the reflectors are of high quality.